IGBT TESTING Most manufacturers IGBT devices are 100% tested before shipping and guaranteed to meet the published parametric data. We generally do not recommend re-testing by the customer because of the potential of damaging the device. If it is necessary to assess the electrical characteristics of the IGBT the following tests can be performed: General Requirements: • Always use static (ESD) safe handling procedures and replace the conductive gate-emitter foam after testing. • Never apply connector to emitter voltages greater...

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. The IGBT is a semiconductor device with four alternating layers (P-N-P-N) that are controlled by a metal-oxide-semiconductor (MOS)...